CrownSil R&D

 

References

  1. M. Scarlete and Cetin Aktik; Scarlete, M., Ceramic Films for Unidirectional Solidification of Semiconductor Materials, CA. Patent application 2,475,212, July 26, 2004; Ceramic Coatings and Process for Producing the Same, and Photovoltaic Device, PCT submission May 23rd 2002.; Procedure for Growing Silicon Single Crystals, RO 97805, 1989, C.A. 104/38737x, M. Scarlete; Thermoplastic Adhesive for Silicon Wafers Processing and Encapsulation of Semiconductor Devices, RO 94792, 1988, C.A. 103/24586w, M. Scarlete et C. Rotaru; Method for the Sytnthesis of a-SiC and
  2. Scarlete, M. Mechanism of Carbon and Oxygen Incorporation in Silicon Single Crystals Grown by the Czochralski (Cz) Technique, M. Scarlete, J. Electrochem. Soc., 1992, 139(4), 1207; Poly(methylsilane) and Poly(methylsiladiazane) as Precursors for Silicon-Containing Ceramics, M. Scarlete, J.He; J.F. Harrod; I.S. Butler, Applications of Organometallic Chemistry in the Synthesis and Processing of Advanced Materials (Eds.: Laine, R.M.; Harrod, J.F.), Kluwer Academic Publishers, Dordrecht, 1995, 371 ; Spectroscopic Analysis and Semiconductor Properties of Amorphous Thin Films Containing Silicon-Carbon-Nitrogen Deposited via Polymeric Route, M. Bercu, C. Aktik, J. Campbell, and M. Scarlete, Canadian Journal of Applied Science and Spectroscopy, 2003, 48(1), 77; Spectroscopic Investigation of the Synthesis of Thin Silicon Nitride Films on Silicon Single Crystal Wafers via Ammonia-Assisted Pyrolysis or Organosilicon Polymers, M. Scarlete, N. McCourt, Ian S. Butler and John F. Harrod, Chemistry of Materials, Nov. 2001, 13, 655; Preparation of Silicon Nitride/Silicon Carbonitride by Pyrolysis of Poly(methylsiladiazane), J.He, M. Scarlete, J.F. Harrod, J. Am. Ceram Soc., 1996, 13, 3009.; Nitrogenation of Silicon Carbide Layers Deposited on the Surface of Silicon Single Crystal Wafers, M. Scarlete, J.F. Harrod, I.S. Butler, Chem. Mater., 1995, 6, 1214; M. Scarlete, S. Brienne, I.S. Butler and J.F. Harrod, Chem. Mater., 1994, 6, 977 Infrared Spectroscopic Study of Thin Films of Poly(methylsilane), its Oxidation and its Transformation into Poly(carbosilane) on the Surfaces of Silicon Single Crystal Wafers; Mechanism of Carbon and Oxygen Incorporation in Silicon Single Crystals Grown by the Czochralski (Cz) Technique, M. Scarlete, J. Electrochem. Soc., 1992, 139(4), 1207; Decreased Thermodynamical Activity of Oxygen in Silicon Single Crystals Grown by the Czochralski Method, D. Laudoniu, M. Scarlete, V. Vanca, Rev. Roum. Chimie, 1990, 34(1), 191; Ohmic Contacts on Double-Diffused p+/n/n+ Silicon Single Crystal Wafers by Electroless Deposition of Nickel, I. Lingvay and M. Scarlete, Rev. Chim., 1987, 23(9), 146;
  3. Fukuda,T ; Koizuka, M ; Ohsawa, A , A Czochralski Silicon Growth Technique which Reduces Carbon Impurity down to the Order of 1014 per Cubic Centimeter, Journal of the Electrochemical Society. 1994 , v. 141 , n. 8 , p. 2216-2219; Fukuda, Tetsuo , Mechanical strength of Czochralski silicon crystals with carbon concentrations from 1014 to 1016 cm-3, Applied Physics Letters. 1994 , v. 65 , n. 11 , p. 1376-1378;
 
 
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